Basic studies of gallium nitride growth on sapphire by metalorganic chemical vapor deposition and optical properties of deposited layersNIEBUHR, R; BACHEM, K; DOMBROWSKI, K et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1531-1534, issn 0361-5235Conference Paper

Defect structures in silicon merged epitaxial lateral overgrowthSAMAVEDAM, S. B; KVAM, E. P; KABIR, A. E et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1747-1751, issn 0361-5235Conference Paper

Large scale production of indium antimonide film for position sensors in automobile enginesWOELK, E; JÜRGENSEN, H; ROLPH, R et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1715-1718, issn 0361-5235Conference Paper

Monitoring of MOCVD reactants by UV absorptionBAUCOM, K. C; KILLEEN, K. P; MOFFAT, H. K et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1703-1706, issn 0361-5235Conference Paper

The contraction of lattice constant and the reduction of growth rate in p-InGaAs grown by organometallic vapor phase epitaxyJEONG SOO KIM; SEUNG WON LEE; HYUNG MUN KIM et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1697-1701, issn 0361-5235Conference Paper

A new buffer layer for MOCVD growth of GaN on sapphireLI, X; FORBES, D. V; GU, S. Q et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1711-1714, issn 0361-5235Conference Paper

Growth of Ga_xIn_1-xAs_1-ySb_y alloys by metalorganic chemical vapor depositionLI SHUWEI; JIN YIXIN; ZHOU TIANMING et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1667-1670, issn 0361-5235Conference Paper

Growth, characterization, and modeling of ternary InGaAs-GaAs quatum wells by selective-area metalorganic chemical vapor depositionJONES, A. M; OSOWSKI, M. L; LAMMERT, R. M et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1631-1636, issn 0361-5235Conference Paper

Semi-insulating selective regrowth of surface light emitting diodesCHING-LONG JIANG; MASHAS, M; FERREIRA, M et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1621-1624, issn 0361-5235Conference Paper

The properties of MOVPE grown 1.3 μm DFB MQW lasers infilled with semi-insulating InP fabricated on semi-insulating substratesCARR, N; THOMPSON, J; JONES, G. G et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1617-1620, issn 0361-5235Conference Paper

The role of the V/III ratio in the growth and structural properties of metalorganic vapor phase epitaxy GaAs/Ge heterostructuresPELOSI, C; ATTOLINI, G; BOCCHI, C et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1723-1730, issn 0361-5235Conference Paper

Characterization of low range GaAsTADAYON, B; TWIGG, M. E; MOHAMMAD FATEMI et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1753-1758, issn 0361-5235Conference Paper

Effect of Se-doping on deep impurities in Al_xGa_1-xAs grown by metalorganic chemical vapor depositionCHEN, J. C; HUANG, Z. C; BING YANG et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1677-1682, issn 0361-5235Conference Paper

Evaluation and optimization of large area III-V epitaxial thickness uniformity using a Fabry-Perot microcavity test structurePADUANO, Q. S; WEYBURNE, D; FENG LU et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1659-1665, issn 0361-5235Conference Paper

Investigation of the wafer temperature uniformity in an OMVPE vertical rotating disk reactorGURARY, A. I; THOMPSON, A. G; STALL, R. A et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1637-1640, issn 0361-5235Conference Paper

On the role of interface properties in the degradation of metalorganic vapor phase epitaxially grown Fe profiles in InPROEHLE, H; SCHROETER-JANSSEN, H; HARDE, P et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1535-1537, issn 0361-5235Conference Paper

Real-time optical monitoring of epitaxial growth : pulsed chemical beam epitaxy of GaP and InP homoepitaxy and heteroepitaxy on SiDIETZ, N; ROSSOW, U; ASPNES, D et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1571-1576, issn 0361-5235Conference Paper

Atomic layer epitaxy of InAs using tertiarybutylarsineTRAN, C. A; ARES, R; WATKINS, S. P et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1597-1603, issn 0361-5235Conference Paper

Carbon doped GaAs grown in low pressure-metalorganic vapor phase epitaxy using carbon tetrabromideRICHTER, E; KURPAS, P; GUTSCHE, D et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1719-1722, issn 0361-5235Conference Paper

Characterization of very high purity InAs grown using trimethylindium and tertiarybutylarsineWATKINS, S. P; TRAN, C. A; SOERENSEN, G et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1583-1590, issn 0361-5235Conference Paper

Minority carrier lifetime in doped and undoped epitaxially grown n-type Cd_xHg_1-xTeBARTON, S; DUTTON, D; CAPPER, P et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1759-1764, issn 0361-5235Conference Paper

Oxygen incorporation, photoluminescence, and laser performance of AlGaAs grown by organometallic vapor phase epitaxySCHWARTZ, B. D; SETZKO, R. S; MOTT, J. S et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1687-1690, issn 0361-5235Conference Paper

The role of the low temperature buffer layer and layer thickness in the optimization of OMVPE growth of GaN on sapphireHERSEE, S. D; RAMER, J; ZHENG, K et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1519-1523, issn 0361-5235Conference Paper

Effects of deposition rate on the size of self-assembled InP islands formed on GaInP/GaAs (100) surfacesREAVES, C. M; BRESSLER-HILL, V; WEINBERG, W. H et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1605-1609, issn 0361-5235Conference Paper

Evidence for reductive elimination of H₂ in the decomposition of primary arsinesFOSTER, D. F; GLIDEWELL, C; WOOLLEY, G. R et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1731-1738, issn 0361-5235Conference Paper